CATEGORIES

Automotive Analog and Power Minimize menu

Search
Cancel
Search History
Bookmark

Please log in  to show your saved searches.

Automotive SiC Diodes

Save to MyST
Overview
Product selector
Solutions
Documentation
CAD Resources
Tools & Software
eDesignSuite
All resource types Minify
Flyers and Brochures
Flyer (4) Selection Guide (1)
Technical Literature
Application Note (1) Datasheet (1)
Presentations
Product Presentation (1)
Flyer (4)
Selection Guide (1)
Application Note (1)
Datasheet (1)
Product Presentation (1)
All resource types Minify
HW Model, CAD Libraries & SVD
SPICE models (1)
SPICE models (1)

The use of high-voltage silicon-carbide diodes in power converter circuits enables to jump over traditional efficiency and power density hurdles.

ST has designed 2 trade-off versions of 650V and 1200V diodes - with the best-in-class forward voltage drop (VF) and surge capability (IFSM) - to drastically limit the conduction losses and lower the diode junction temperature, which is key for secondary rectification functions.
In PFC applications – for primary rectification – the diodes are directly connected to the main supply. The proven robustness our silicon carbide diodes has enabled ST to be the first supplier to release automotive-grade and AEC-Q101-qualified silicon carbide devices on the market. And our engineers work on low VF and high surge capability now contributes to ever-increasing design robustness, for augmented converter efficiency and reliability.

ST’s automotive-grade 650 V diode series ranges from 6 to 40 A, in TO-220, TO-220ACIns, DO-247, TO-247, I²PAK and DPAK packages. Our very low VF and high IFSM series automotive-grade 1200 V devices range from 10 to 20 A, in a TO-220 package.

Featured Products

Recommended for you

1200 V SiC automotive-grade diodes with the lowest forward voltage drop ever

The new AEC-Q101 1200 V SiC diodes – 10-, 15- and 20-amp rated – are ideal for use in high-power applications such as charging stations, OBC, power supplies, and motor drives. Their surge capability for a 10 ms pulse is in the range of 7 times the diodes’ nominal current, and confers these 1200 V silicon-carbide diodes the state-of-the-art robustness. With a typical forward voltage drop (V F) of 1.35 V at nominal current and room temperature, they set the highest level/standard on the market. Available in D²PAK and TO-220AC packages, the STPSC10H12-Y, STPSC15H12-Y and STPSC20H12-Y fulfill the automotive robustness and performance requirements.
Resource title
Resource type
Resource title
Resource type