ST’s broad range of power bipolar transistors will give you the perfect fit for your energy-efficient designs. The range includes Darlington transistors and BJTs with a VCES from 15 to 1700 V.
Key features of ST’s power bipolar transistors include:
- Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses
- Integrated diode versions for reduced component count
- Well-controlled hFE parameter for increased reliability
- Best cost-performance ratio
These power bipolar transistors are available in both NPN and PNP polarity and they are offered in a large variety of SMD and through all packages.