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In a phase-shifting, zero voltage switching full-bridge converter, the two legs of the full-bridge are switched with two square waves whose phase shift is modulated by the converter’s control loop and the resulting square wave is fed into the primary of the transforms that provides primary-secondary isolation and voltage scaling. Parasitic resonance between the capacitance of the transistors and the transformer’s leakage inductance is exploited to ensure a soft turn-on – ideally zero voltage switching (ZVS) - for all four switches in the primary. To also extend the ZVS range at light loads, a resonance inductor is introduced in series with the primary winding of the transformer.

ZVS helps reduce switching losses and stress in addition to removing the need for primary snubbers. It also enables higher switching frequencies which helps in the design of converters with higher efficiency and power density, making this converter well suited for high-power (> 600 W), high-frequency applications.

ST offers a range of advanced digital controllers, rectifiers and power MOSFETs with improved reverse recovery time of their intrinsic diode. Our high-performance STM32 microcontrollers with an extended range of dedicated peripherals including high-resolution PWM timers and high-speed ADCs together with our hardware and software evaluation and development tools as well as reference designs enable developers to fully exploit the benefits of full-bridge phase-shift ZVS converters.

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Technical Documentation

    • Description Version Size Action
      AN1768
      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES
      1.1
      46.82 KB
      PDF
      AN2025
      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION
      1.1
      147.59 KB
      PDF
      AN604
      Calculation of conduction losses in a power rectifier
      3.2
      137.74 KB
      PDF
      AN4021
      Calculation of reverse losses in a power diode
      1.0
      120.47 KB
      PDF
      AN5028
      Calculation of turn-off power losses generated by a ultrafast diode
      1.0
      1.68 MB
      PDF
      AN4381
      Current sharing in parallel diodes
      1.0
      449.12 KB
      PDF
      AN2626
      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter
      1.4
      446.79 KB
      PDF
      AN1453
      NEW FAMILY OF 150V POWER SCHOTTKY
      1.1
      131.48 KB
      PDF
      AN5046
      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
      4.0
      4.82 MB
      PDF
      AN5088
      Rectifiers thermal management, handling and mounting recommendations
      2.0
      2.32 MB
      PDF
      AN533
      SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting
      3.6
      217.19 KB
      PDF
      AN443
      SERIES OPERATION ON FAST RECTIFIERS
      2.1
      202.48 KB
      PDF
      AN4856
      STEVAL-ISA172V2: 2 kW fully digital AC - DC power supply (D-SMPS) evaluation board
      1.0
      4.25 MB
      PDF
      AN1542
      THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION
      1.1
      57.47 KB
      PDF
      AN869
      Tj max limit of Schottky diodes
      2.2
      60.9 KB
      PDF
      AN1768

      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES

      AN2025

      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION

      AN604

      Calculation of conduction losses in a power rectifier

      AN4021

      Calculation of reverse losses in a power diode

      AN5028

      Calculation of turn-off power losses generated by a ultrafast diode

      AN4381

      Current sharing in parallel diodes

      AN2626

      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter

      AN1453

      NEW FAMILY OF 150V POWER SCHOTTKY

      AN5046

      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages

      AN5088

      Rectifiers thermal management, handling and mounting recommendations

      AN533

      SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting

      AN443

      SERIES OPERATION ON FAST RECTIFIERS

      AN4856

      STEVAL-ISA172V2: 2 kW fully digital AC - DC power supply (D-SMPS) evaluation board

      AN1542

      THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION

      AN869

      Tj max limit of Schottky diodes

Publications and Collaterals

    • Description Version Size Action
      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages 1.0
      748.77 KB
      PDF
      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode 1.0
      342.97 KB
      PDF
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
      PDF
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      755.53 KB
      PDF
      Automotive-grade SiC diodes with very low forward voltage drop 1.0
      1.33 MB
      PDF
      Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters 2.0
      958.23 KB
      PDF
      ST Diodes Finder : the new app for Android and iOS 2.0
      1.46 MB
      PDF

      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages

      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode

      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

      Automotive-grade SiC diodes with very low forward voltage drop

      Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters

      ST Diodes Finder : the new app for Android and iOS

    • Description Version Size Action
      Brochure Power management guide 10.2018
      4.42 MB
      PDF

      Brochure Power management guide

eDesignSuite

Converter

Input

V This option is required. And must be less than or equal to Volt. Max [V]
V This option is required. And must be greater than or equal to Volt. Min [V]

Output Power

V This option is required and must be a number.
A This option is required and must be a number.

Diodes and Rectifiers

Part number Description
FERD20H100S 100 V, 20 A Field-Effect Rectifier Diode (FERD)
FERD20S100S 100 V, 20 A Field-Effect Rectifier Diode (FERD)
STPS20150C 150 V, 20 A dual Power Schottky Rectifier
STPS20SM60 60 V, 20 A Low leakage Power Schottky rectifier
STPS30SM100S 100 V, 30 A 3-lead single Low Leakage Power Schottky rectifier
Part number
100 V, 20 A Field-Effect Rectifier Diode (FERD)
100 V, 20 A Field-Effect Rectifier Diode (FERD)
150 V, 20 A dual Power Schottky Rectifier
60 V, 20 A Low leakage Power Schottky rectifier
100 V, 30 A 3-lead single Low Leakage Power Schottky rectifier

Power Transistors

Part number Description
STF140N6F7 N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package
STF24N60DM2 N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
STH140N8F7-2 N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
STP43N60DM2 N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
Part number
N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package