PS ZVS FB Converter
In a phase-shifting, zero voltage switching full-bridge converter, the two legs of the full-bridge are switched with two square waves whose phase shift is modulated by the converter’s control loop and the resulting square wave is fed into the primary of the transforms that provides primary-secondary isolation and voltage scaling. Parasitic resonance between the capacitance of the transistors and the transformer’s leakage inductance is exploited to ensure a soft turn-on – ideally zero voltage switching (ZVS) - for all four switches in the primary. To also extend the ZVS range at light loads, a resonance inductor is introduced in series with the primary winding of the transformer.
ZVS helps reduce switching losses and stress in addition to removing the need for primary snubbers. It also enables higher switching frequencies which helps in the design of converters with higher efficiency and power density, making this converter well suited for high-power (> 600 W), high-frequency applications.
ST offers a range of advanced digital controllers, rectifiers and power MOSFETs with improved reverse recovery time of their intrinsic diode. Our high-performance STM32 microcontrollers with an extended range of dedicated peripherals including high-resolution PWM timers and high-speed ADCs together with our hardware and software evaluation and development tools as well as reference designs enable developers to fully exploit the benefits of full-bridge phase-shift ZVS converters.
Resources
Technical Documentation
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AN1768: ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES | 1.1 | 46.82 KB |
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AN2025: CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION | 1.1 | 147.59 KB |
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AN604: Calculation of conduction losses in a power rectifier | 3.2 | 137.74 KB |
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AN4021: Calculation of reverse losses in a power diode | 1.0 | 120.47 KB |
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AN5028: Calculation of turn-off power losses generated by a ultrafast diode | 1.0 | 1.68 MB |
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AN4381: Current sharing in parallel diodes | 1.0 | 449.12 KB |
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AN2626: MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter | 1.4 | 446.79 KB |
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AN1453: NEW FAMILY OF 150V POWER SCHOTTKY | 1.1 | 131.48 KB |
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AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT™ packages | 3.0 | 5.33 MB |
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AN5088: Rectifiers thermal management, handling and mounting recommendations | 2.0 | 2.32 MB |
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AN533: SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting | 3.6 | 217.19 KB |
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AN443: SERIES OPERATION ON FAST RECTIFIERS | 2.1 | 202.48 KB |
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AN4856: STEVAL-ISA172V2: 2 kW fully digital AC - DC power supply (D-SMPS) evaluation board | 1.0 | 4.25 MB |
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AN1542: THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION | 1.1 | 57.47 KB |
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AN869: Tj max limit of Schottky diodes | 2.2 | 60.9 KB |
Publications and Collaterals
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1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages | 1.0 | 748.77 KB |
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400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode | 1.0 | 342.97 KB |
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500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series | 1.0 | 720.83 KB |
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600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series | 1.0 | 755.53 KB |
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Automotive-grade SiC diodes with very low forward voltage drop | 1.0 | 1.33 MB |
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Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters | 2.0 | 958.23 KB |
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ST Diodes Finder : the new app for Android and iOS | 2.0 | 1.46 MB |
