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In a two-switch flyback topology, a high-side power MOSFET – placed between the input voltage rail and the transformer – and snubber diode are added to help overcome the limitations of conventional flyback topology as the overall voltage stress is equally split between the two transistors. This is particularly valuable in high-voltage applications such as auxiliary power supplies supplied by a three-phase input rail. A dual-switch flyback topology also removes clamping losses by recycling the leakage energy to the input side via the two diodes, thus boosting efficiency and reducing thermal stress while clamping the maximum voltage stress of the power MOSFET to the input voltage.

We offer a range of controllers supporting quasi-resonant mode, power MOSFETs, diodes and protection devices as well as a range of hardware and software development and evaluation tools to help design high-efficiency two transistor flyback AC-DC converters.

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Technical Documentation

    • Description Version Size Action
      AN1768
      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES
      1.1
      46.82 KB
      PDF
      AN2025
      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION
      1.1
      147.59 KB
      PDF
      AN604
      Calculation of conduction losses in a power rectifier
      3.2
      137.74 KB
      PDF
      AN4021
      Calculation of reverse losses in a power diode
      1.0
      120.47 KB
      PDF
      AN1453
      NEW FAMILY OF 150V POWER SCHOTTKY
      1.1
      131.48 KB
      PDF
      AN5046
      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
      4.0
      4.82 MB
      PDF
      AN5088
      Rectifiers thermal management, handling and mounting recommendations
      2.0
      2.32 MB
      PDF
      AN443
      SERIES OPERATION ON FAST RECTIFIERS
      2.1
      202.48 KB
      PDF
      AN869
      Tj max limit of Schottky diodes
      2.2
      60.9 KB
      PDF
      AN1768

      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES

      AN2025

      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION

      AN604

      Calculation of conduction losses in a power rectifier

      AN4021

      Calculation of reverse losses in a power diode

      AN1453

      NEW FAMILY OF 150V POWER SCHOTTKY

      AN5046

      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages

      AN5088

      Rectifiers thermal management, handling and mounting recommendations

      AN443

      SERIES OPERATION ON FAST RECTIFIERS

      AN869

      Tj max limit of Schottky diodes

Publications and Collaterals

    • Description Version Size Action
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      755.53 KB
      PDF
      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series 1.0
      516.44 KB
      PDF
      ST Diodes Finder : the new app for Android and iOS 2.0
      1.46 MB
      PDF

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series

      ST Diodes Finder : the new app for Android and iOS

    • Description Version Size Action
      Diodes and rectifiers selection guide 2.0
      815.09 KB
      PDF

      Diodes and rectifiers selection guide

    • Description Version Size Action
      Brochure Power management guide 10.2018
      4.42 MB
      PDF

      Brochure Power management guide

eDesignSuite

Converter

Input

V This option is required. And must be less than or equal to Volt. Max [V]
V This option is required. And must be greater than or equal to Volt. Min [V]

Output Power

V This option is required and must be a number.
A This option is required and must be a number.

Diodes and Rectifiers

Part number Description
FERD20U60DJFD 60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)
FERD40H100S 100 V, 40 A Field-Effect Rectifier Diode (FERD)
STPS10150C 150 V, 10 A dual Power Schottky Rectifier
STPS1045DEE 45 V, 10 A PowerFLAT Power Schottky Rectifier
STTH108 800 V, 1 A Ultrafast Diode
STTH112 1200 V, 1A Ultrafast Diode
STTH15RQ06 600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode
STTH30RQ06 600 V, 30 A Turbo 2 Soft Ultrafast Recovery Diode
Part number
60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)
100 V, 40 A Field-Effect Rectifier Diode (FERD)
150 V, 10 A dual Power Schottky Rectifier
45 V, 10 A PowerFLAT Power Schottky Rectifier
800 V, 1 A Ultrafast Diode
1200 V, 1A Ultrafast Diode
600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode
600 V, 30 A Turbo 2 Soft Ultrafast Recovery Diode

Power Management

Part number Description
HVLED001A Offline controller for LED lighting with constant voltage primary-sensing and high power factor
STCH02 Offline PWM quasi resonant controller for ultra-low standby power supplies
Part number
Offline controller for LED lighting with constant voltage primary-sensing and high power factor
Offline PWM quasi resonant controller for ultra-low standby power supplies

Power Transistors

Part number Description
STB38N65M5 N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
STB5N80K5 N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
STF24N60M2 N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
STL110N10F7 N-channel 100 V, 5 mOhm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL130N8F7 N-channel 80 V, 3.0 mOhm typ., 120 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package
Part number
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 100 V, 5 mOhm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
N-channel 80 V, 3.0 mOhm typ., 120 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package