This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL9P4LF6AG
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 3.3x3.3||Automotive||Ecopack2|| |
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from distributors||Order from ST||Package||Packing Type||Marketing Status||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|STL9P4LF6AG|| distributors |
Distributor availability of STL9P4LF6AG
Distributor reported inventory date:
| Buy from Distributor ||PowerFLAT 3.3x3.3||Tape and Reel|| |
Tape and Reel
Country of Origin:
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors