The STPSC20065C is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Low Forward voltage drop
- Operating Tj from -40 °C to +175 °C
- ECOPACK2 compliant component
- Power efficient product
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-247 long leads||Industrial||Ecopack2 (**)|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Junction Temperature (°C) (max)||Country of Origin||Budgetary Price (US$)*/Qty||More info|
|STPSC20065CWL||No availability of distributors reported, please contact our sales office||
|EAR99||NEC||Tube||TO-247 long leads||-||-||175||PHILIPPINES||2.701 / 100||
Budgetary Price (US$)*/Qty2.701 / 100
TO-247 long leads
Operating Temperature (°C)
Budgetary Price (US$)* / Qty
2.701 / 100
Junction Temperature (°C) (max)
Country of Origin