Product overview
Description
The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode boost the performance in hard switching conditions. This rectifier enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
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All features
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 compliant component
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STPSC20H12
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 12.0 | 05 Dec 2025 | 05 Dec 2025 |
SIMPLIS models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |