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The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- AEC-Q101 qualified
- PPAP capable
- ECOPACK®2 compliant component
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STPSC40065CWY | Active | TO-247 | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|---|
| STPSC40065CWY | 8 distributors | Buy now | Active | TO-247 | Tube | 175 | EAR99 | CHINA | 5.502 / 100 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
