In the challenging quest of increasing electrical efficiency and longer battery autonomy for hybrid and electric vehicles (HEVs, EVs), high-voltage silicon-carbide diodes are key to power-supply designers.
Ideal for power factor correction circuits (PFCs), on-board battery chargers (OBCs) and motor drives, ST’s automotive-grade SiC diodes prove high-surge capability (IFSM), guaranteeing robustness. While ST's already available 650 V power Schottky SiC automotive-grade diodes exhibit negligible switching losses, our new series of low-VF SiCs exceeds expectations with at least a 150 mV VF improvement over the fastest 600 V ultrafast silicon diodes. Available in TO-220AC, DO-247 and TO-247 packages, all these are AEC-Q101 qualified, and PPAP capable (upon request).
A 1200 V automotive-grade SiC diode portfolio – rated from 6 to 20 A – is expected to be available at the end of this year, in various package versions as well.