Product overview
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.-
All features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
Featured Videos
All tools & software
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Product Specifications (1)
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Presentations (1)
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Brochures (2)
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Conference Papers (1)
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EDA Symbols, Footprints and 3D Models
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SPICE models (1)
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Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STPSC8H065CT | Active | TO-220AB | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | More info | ||
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STPSC8H065CT | 2 distributors | Buy Direct | Active | EAR99 | NEC | Tube | TO-220AB | - | - | 175 | CHINA | 1.1 / 100 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors