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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STPSC8H065CT | Active | 1.1 | 100 | TO-220AB | Tube | 175 | EAR99 | CHINA | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STPSC8H065CT | Active | TO-220AB | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
