STPSC8H065C

Obsolete
Design Win

650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode

Download datasheet

Product overview

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.

Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • High forward surge capability

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC8H065C

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models