STDRIVEG600W

Active

High voltage half-bridge gate driver for GaN transistors

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Product overview

Description

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.
The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
The STDRIVEG600W features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.
  • All features

    • dV/dt immunity ±200 V/ns
    • Driver current capability:
      • 1.3/2.4 A source/sink typ @ 25 °C, 6 V
      • 5.5/6 A source/sink typ @ 25 °C, 15 V
    • Separated turn on and turn off gate driver pins
    • 45 ns propagation delay with tight matching
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Interlocking function
    • UVLO on low-side and high-side sections
    • Dedicated pin for shut down functionality
    • Over temperature protection

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All tools & software

    • Part number
      Status
      Description
      Type
      Supplier

      EVSTDRIVEG600DG

      Active

      Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs

      PSU and Converter Solution Eval Boards ST
      EVSTDRIVEG600DG

      Description:

      Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs

      EVSTDRIVEG600DM

      Active

      Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET

      PSU and Converter Solution Eval Boards ST
      EVSTDRIVEG600DM

      Description:

      Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STDRIVEG600W

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STDRIVEG600W
Active
US WF V.I. Industrial N/A

STDRIVEG600W

Package:

US WF V.I.

Material Declaration**:

Marketing Status

Active

Package

US WF V.I.

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STDRIVEG600W No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tube US WF V.I. -40 150 ITALY 0.9625 / 1k

STDRIVEG600W

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

0.9625 / 1k

ECCN (EU)

NEC

Packing Type

Tube

Package

US WF V.I.

Operating Temperature (°C)

(min)

-40

(max)

150

Budgetary Price (US$)* / Qty

0.9625 / 1k

Country of Origin

ITALY

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors