The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage.
- High switching speed
- Good performances in terms of hFElinearity
Recommended for you
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.