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ST's MDmesh high voltage and very high voltage MOSFETs with a breakdown voltage greater than 700 V offer a very low gate charge (Qg) and low on-resistance (RDS(on)) down to 250 mΩ (at 900 V) in the TO-220 and 900 mΩ (at 1500 V) in the TO-247. These high voltage super-junction power MOSFETs are belonging to the STPOWER™ family.

Specific voltages available include 800 V, 850 V, 900 V, 950 V, 1000 V, 1050 V, 1200 V and 1700 V.

ST has also enriched its very high voltage MOSFET portfolio with the introduction of 950 V and 1050 V fast recovery diode devices (MDmesh DK5) ideal for ZVS LLC resonant converters. They feature the industry's best reverse recovery time (trr) of 250 ns (typ.).

These N-channel high voltage MOSFETs help simplify designs and increase efficiency in applications such as SMPS, monitors and TV adapters, auxiliary power supplies, battery chargers, medical, UPS, metering, micro-inverters, LED drivers and HF ballasts.

Our wide STPOWER™ product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

Featured Products

1200 V MDmesh K5 power MOSFETs

ST’s MDmesh K5 series of super-junction MOSFETs has been extended with the introduction of 1200 V devices ensuring a higher safety margin for more robust and reliable applications. Ideal for welding, 3-phase SMPS, solar-micro inverters and lighting applications, they feature the industry’s best figure of merit (FoM) thanks to the low on-resistance (down to 0.69 Ω in the TO-220 package) combined with ultra-low gate charge (44.2 nC).

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