ST’s MDmesh MOSFETs with a breakdown voltage greater than 700 V offer a very low gate charge (Qg) and low on-resistance (R DS(on)) down to 250 mΩ (at 900 V) in the TO-220 and 900 mΩ (at 1500 V) in the TO-247.
Specific voltages available include 800 V, 850 V, 900 V, 950 V, 1050 V, 1200 V and 1500 V.
ST has also enriched its portfolio of very high voltage MOSFETs with the introduction of 950 V and 1050 V fast recovery diode devices (MDmesh DK5) ideal for ZVS LLC resonant converters. They feature the industry’s best reverse recovery time (t rr) of 250 ns (typ.).
These N-channel power MOSFETs help simplify designs and increase efficiency in applications such as SMPS, monitors and TV adapters, auxiliary power supplies, battery chargers, medical, UPS, metering, micro-inverters, LED drivers and HF ballasts.

1200 V MDmesh K5 power MOSFETs

ST’s MDmesh K5 series of super-junction MOSFETs has been extended with the introduction of 1200 V devices ensuring a higher safety margin for more robust and reliable applications. Ideal for welding, 3-phase SMPS, solar-micro inverters and lighting applications, they feature the industry’s best figure of merit (FoM) thanks to the low on-resistance (down to 0.69 Ω in the TO-220 package) combined with ultra-low gate charge (44.2 nC).

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