ST’s STripFET N-channel MOSFETs with a breakdown voltage range from 12 V to 30 V offer ultra-low gate charge and low on-resistance down to 1.1 mΩ (30 V) in the PowerFLAT 5x6 package. They are optimized to meet a broad range of requirements for point-of-load (PoL), VRM, motherboards, notebooks, portable and ultra-portable appliances, linear regulators, synchronous rectification and automotive applications. MOSFET features for this voltage rating include:
- Very low RDS(on) for increased application efficiency
- Wide package range including SMD PowerFLAT packages for compact designs and H2PAK packages for high power designs
- Standard, logic and super logic level threshold for increased design flexibility
These MOSFETs are available in miniature and high-power packages: DPAK, D2PAK, H2PAK, IPAK, I2PAK, PowerSO10, SO-8, SOT-223, TO-220, and PowerFLAT (2x2; 3.3x3.3; 5x6; 5x6 double island, 5x6 common drain).