Product overview
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
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All features
- Very low RDS(on) over the entire temperature range
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCT10N120
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| Resource title | Version | Latest update | Actions | Details | Download |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 27 Mar 2017 | 27 Mar 2017 |