This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from Distributors||Order from ST||Package||Packing Type||Marketing Status||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|SCTH90N65G2V-7||1 distributors||Buy now||H2PAK-7||Tape And Reel|| |
|EAR99||CHINA||29.5 / 1k|
Packing TypeTape And Reel
Budgetary Price (US$)* / Qty
29.5 / 1k
Country of Origin