Product overview
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
-
All features
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
eDesignSuite
eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products.
Power Management Design Center
Thermal-electrical Simulators for Components
Signal Conditioning Design Tool
NFC/RFID Calculators
Power Supply Design Tool
LED Lighting Design Tool
Digital Power Workbench
Power Tree Designer
STPOWER Studio
PCB Thermal Simulator
AC Switches Simulator
Rectifier Diodes Simulator
Twister Sim
TVS Simulator