SH70M12W3AG

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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MOSFET

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Product overview

Description

The ACEPACK SMIT is a very compact surface mounted SiC MOSFET module. Thanks to the DBC substrate, the ACEPACK SMIT package provides reliable insulation, a low thermal resistance and high flexibility, enabling several configurations.

The SiC MOSFETs inside provide outstanding features, like very low on-resistance, fast switching, reduced parasitic, and robust body diode. The half-bridge association can be used to build several topologies: totem pole PFC, full, and B6 bridges.

  • All features

    • AQG 324 qualified
    • Half-bridge topology SiC MOSFET module
    • 1200 V rated voltage
    • Dice on direct bond copper (DBC) substrate
    • SMD with insulated top side cooling
    • Isolation voltage of 3.4 kVrms
    • Low thermal resistance
    • Package molding compound group I (CTI ≥ 600 V, 1000 Vrms in pollution degree 2)

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SH70M12W3AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SH70M12W3AG
Active
ACEPACK SMIT Automotive Ecopack2

SH70M12W3AG

Package:

ACEPACK SMIT

Material Declaration**:

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Marketing Status

Active

Package

ACEPACK SMIT

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors