Product overview
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
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All features
- FULLY CHARACTERIZED AT 125 °C
- VERY HIGH SWITCHING SPEED
- FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
- IMPROVED SPECIFICATION:
LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE - INTEGRATED FREE-WHEELING DIODE
- HIGH VOLTAGE CAPABILITY
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LARGE RBSOA
- LOW SPREAD OF DYNAMIC PARAMETERS
EDA Symbols, Footprints and 3D Models
STMicroelectronics - ST13007DFP
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