STB18N60DM2

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N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

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Product overview

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

  • All features

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB18N60DM2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB18N60DM2
Active
D2PAK Industrial Ecopack2

STB18N60DM2

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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