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STB7ANM60N
Obsolete
Design Win
N-channel 600 V, 800 mOhm typ., 5 A MDmesh II Power MOSFET in a D2PAK package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • AEC-Q101 qualified
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance
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STMicroelectronics - STB7ANM60N

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SPICE models (1)

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STB7ANM60N PSpice model
1.0 16 Sep 2016
ZIP
16 Sep 2016
STB7ANM60N PSpice model 1.0

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