Product overview
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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All features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD170N4F7AG
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3D models
All resources
| Resource title | Version | Latest update | Actions | Details | Download |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | |
|---|---|---|---|---|---|
| ZIP | 1.0 | 22 Mar 2017 | 22 Mar 2017 |