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  • These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

    Key Features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

Sample & Buy

Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STD9NM40N DPAK Tape And Reel
NRND
- - EAR99 - No availability of distributors reported, please contact our sales office

STD9NM40N

Package

DPAK

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

NRND

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Development Tools

    • Part Number

      MOSFET product finder application for Android and iOS

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS9302
      N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages
      2.1
      1.05 MB
      PDF
      DS9302

      N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN1703
      Guidelines for using ST's MOSFET smd Packages
      1.3
      776.65 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN1703

      Guidelines for using ST's MOSFET smd Packages

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD9NM40N
NRND
DPAK Industrial Ecopack2

STD9NM40N

Package:

DPAK

Material Declaration**:

Marketing Status

NRND

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.