ST's MDmesh super-junction (SJ) MOSFETs with a breakdown voltage range from 250 V to 650 V offer an extremely low on-resistance (RDS(ON)) down to 12 mΩ (650 V) in a MAX-247 package. These N-channel SJ MOSFETs belong to the STPOWER family.
STPOWER MOSFET standard series
Different dedicated product series are available depending on the target circuit topology and application. Technology versatility and flexibility allow system designers to get a large variety of options from the previous series (M2, M5, M6) to the latest M9 that is suitable both for hard switching topologies and for resonant ones, massively used on high-power density system.
STPOWER MOSFET fast-recovery body diode series
Furthermore, MDmesh series also includes the version (DM2, DM6, DM9) with a fast recovery intrinsic diode. Thanks to an added platinum diffusion process with respect to the standard process, an enhancing in the performance of the integral body-diode in terms of reduced reverse recovery time trr, and reverse recovery charge Qrr plus improved dv/dt (DMx series) has been obtained, all features being ideal in bridge and high-power phase-shift circuits.
These MDmesh SJ power MOSFETs are available in miniature and high-power packages: HU3PAK, DPAK, IPAK, D2PAK, H2PAK, I2PAK, MAX-247, ISOTOP, SOT-223, SOT223-2L, TO-220, TO-220FP, TO-247, TO-247 long leads TO-247-4, TO-3PF, TO-LL and PowerFLAT family (3.3 x 3.3 mm, 5 x 5 mm, 5 x 6 mm HV, and 8 x 8 mm HV).
Our wide STPOWER product portfolio, combined with state-of-the-art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.