This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on) on x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
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