STF9NM60N

NRND
Design Win

N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET

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Product overview

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STF9NM60N

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STF9NM60N
NRND
TO-220FP Industrial Ecopack2

STF9NM60N

Package:

TO-220FP

Material Declaration**:

Marketing Status

NRND

Package

TO-220FP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STF9NM60N NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors