Product overview
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
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All features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Wide distance of 4.25 mm between the pins
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STMicroelectronics - STFH10N60M2
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| Resource title | Version | Latest update | Actions | Details | Download |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | |
|---|---|---|---|---|---|
| ZIP | 1.0 | 02 Feb 2021 | 02 Feb 2021 |