Product overview
Description
This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.
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All features
- 5 μs of short-circuit withstand time
- Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
- Tight parameter distribution
- Low switching-off losses
- Safer paralleling
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG25H120F2D7
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Quality and Reliability
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Temperature (°C) | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STG25H120F2D7 | | | distributors No availability of distributors reported, please contact our sales office | D.SCRIB.100% VI STAT | Not Applicable | ITALY | EAR99 | NEC | - | - | - | |||
STG25H120F2D7 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors