STGB20H65DFB2

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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

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Product overview

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • All features

    • Maximum junction temperature : TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
    • Very fast and soft recovery co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STGB20H65DFB2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB20H65DFB2
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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package D2PAK Industrial Ecopack2

STGB20H65DFB2

Package:

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

Material Declaration**:

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Marketing Status

Active

General Description

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB20H65DFB2
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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

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