Product overview
Description
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
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All features
- Designed for automotive applications and AEC-Q101 qualified
- Low on-voltage drop (VCE(sat))
- Low Cres/ Cies ratio (no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Short-circuit rated
- Very soft Ultrafast recovery anti-parallel diode
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGD10HF60KD
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Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
|---|
SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGD10HF60KD | Active | Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | DPAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Country of Origin | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGD10HF60KD | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tape and Reel | DPAK | -55 | 150 | CHINA | Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | | CHINA | Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors