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These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGD10NC60KDT4 | DPAK | Tape And Reel | Active | 0.9 | 1000 | EAR99 | CHINA | 10 A, 600 V short-circuit rugged IGBT in a DPAK package | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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Development Tools
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGD10NC60KDT4 | Active | 10 A, 600 V short-circuit rugged IGBT in a DPAK package | DPAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
