Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
- Low on voltage drop (Vcesat)
- Low CRES / CIESratio (no cross-conduction susceptibility)
- High frequency operation
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drivers
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|N-channel 600 V, 7 A very fast IGBT||IPAK||Industrial||Ecopack2|| |
Package:N-channel 600 V, 7 A very fast IGBT
N-channel 600 V, 7 A very fast IGBT
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.