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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
Key Features
- High input impedance (voltage driven)
- Off losses include tail current
- Low on-voltage drop (Vcesat)
- High current capability
- Low gate charge
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Order from ST | Order from Distributors |
|---|---|---|---|---|---|---|---|---|---|
| STGE200NB60S | ISOTOP | Tube | Active | EAR99 | MOROCCO | N-channel 600 V, 150 A, low drop IGBT | 18.0 / 10.0 | Buy now | Check Availability |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGE200NB60S | Active | N-channel 600 V, 150 A, low drop IGBT | ISOTOP | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
