This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Short circuit withstand time 10μs
- Low Cres / Cies ratio (no cross conduction susceptibility)
- Low on-voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Switching losses include diode recovery energy
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|14 A, 600 V short-circuit rugged IGBT||TO-220FP||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.