Trench gate field-stop IGBT M series, 650 V 30 A low loss

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
General Description
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STGF30M65DF2 TO-220FP Tube
Active
2.4 1000 EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 30 A low loss Check Availability

Distributor availability ofSTGF30M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 50 1 Order Now
FUTURE WORLDWIDE 1000 1000 Order Now
MOUSER WORLDWIDE 1961 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

50

Min.Order

1

Region

WORLDWIDE Order Now

FUTURE

Stock

1000

Min.Order

1000

Region

WORLDWIDE Order Now

MOUSER

Stock

1961

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-07-16

Get sample

STGF30M65DF2

Package

TO-220FP

Packing Type

Tube

Unit Price (US$)

2.4*

Distributor availability ofSTGF30M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 50 1 Order Now
FUTURE WORLDWIDE 1000 1000 Order Now
MOUSER WORLDWIDE 1961 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

50

Min.Order

1

Region

WORLDWIDE Order Now

FUTURE

Stock

1000

Min.Order

1000

Region

WORLDWIDE Order Now

MOUSER

Stock

1961

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-07-16

Marketing Status

Active

Unit Price (US$)

2.4

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      DS10850
      Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package
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      Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

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HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGF30M65DF2 PSpice model 1.0
      2.66 KB
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      STGF30M65DF2 PSpice model

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Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGF30M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 30 A low loss TO-220FP Industrial Ecopack2

STGF30M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Package

TO-220FP

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.