STGF30M65DF2

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Trench gate field-stop IGBT M series, 650 V 30 A low loss

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
  • All features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

All tools & software

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      STPOWER IGBT Finder

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      STPOWER IGBT finder mobile app for tablets and smartphones

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      STPOWER IGBT Finder

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      STPOWER IGBT finder mobile app for tablets and smartphones

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGF30M65DF2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGF30M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 30 A low loss TO-220FP Industrial Ecopack2

STGF30M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Package

TO-220FP

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
More info
min
max
STGF30M65DF2 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tube TO-220FP -55 175 2.4 / 1k
MORE INFO

Country of Origin:

CHINA

General Description:

Trench gate field-stop IGBT M series, 650 V 30 A low loss

STGF30M65DF2

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

2.4 / 1k

ECCN (EU)

NEC

Packing Type

Tube

Package

TO-220FP

Operating Temperature (°C)

(min)

-55

(max)

175

Budgetary Price (US$)* / Qty

2.4 / 1k

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors