STGP20V60DF

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Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ= 175 °C
    • Very high speed switching series
    • Tail-less switching off
    • Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode
    • Lead free package

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STMicroelectronics - STGP20V60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGP20V60DF
Active
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed TO-220 Industrial Ecopack2

STGP20V60DF

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Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Package

TO-220

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

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