These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
- Low on-voltage drop (VCE(sat))
- Off losses include tail current
- Losses include diode recovery energy
- High frequency operation up to 70 kHz
- Very soft ultra fast recovery anti parallel diode
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode||TO-220AB||Industrial||Ecopack2|| |
Package:N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.