STGWA80H65FB

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Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 1.6 V(typ) @ IC = 80 A
    • Safe paralleling
    • Tight parameter distribution
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGWA80H65FB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA80H65FB
Active
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed TO-247 long leads Industrial Ecopack2

STGWA80H65FB

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Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

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