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This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Key Features
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Sample & Buy
Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
---|---|---|---|---|---|---|---|---|---|
STH13N120K5-2AG | H2PAK-2 | Tape And Reel | Active | 8 | 1000 | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
STH13N120K5-2AG
Package
H2PAK-2Packing Type
Tape And ReelUnit Price (US$)
8.0*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
Featured Videos
Development Tools
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STH13N120K5-2AG | Active | H2PAK-2 | Automotive | Ecopack1 | |
STH13N120K5-2AG
Package:
H2PAK-2Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.