STH150N10F7-2

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Design Win

N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package

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Product overview

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • All features

    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STH150N10F7-2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH150N10F7-2
Active
H2PAK-2 Industrial Ecopack1

STH150N10F7-2

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors