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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key Features

    • Among the lowest RDS(on)on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Cissratio for EMI immunity
    • High avalanche ruggedness

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CAD/EDA Symbols, Footprints and Models

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH170N8F7-2
Active
H2PAK-2 Industrial Ecopack1

STH170N8F7-2

Package:

H2PAK-2

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STH170N8F7-2 No availability of distributors reported, please contact our sales office Buy now
Active
EAR99 NEC Tape And Reel H2PAK-2 - - CHINA 2.5 / 1k

STH170N8F7-2

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

2.5 / 1k

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

H2PAK-2

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

2.5 / 1k

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors