STH240N10F7-2

Active
Design Win

N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

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Product overview

Description

These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STH240N10F7-2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH240N10F7-2
Active
H2PAK-2 Industrial Ecopack1

STH240N10F7-2

Package:

H2PAK-2

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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STH240N10F7-2 Available at distributors

Distributor availability of STH240N10F7-2

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Active
EAR99 NEC Tape and Reel H2PAK-2 - - CHINA

STH240N10F7-2 Active

Package:
H2PAK-2
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STH240N10F7-2

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors