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These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Ultra low on-resistance
- 100% avalanche tested
Featured Videos
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
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Product Specifications (1)
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09 Feb 2018 |
09 Feb 2018
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Application Notes (5)
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13 Sep 2018 |
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User Manuals (1)
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21 Oct 2016 |
21 Oct 2016
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Flyers (4)
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13 Jun 2019 |
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Brochures (1)
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23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
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HW Model, CAD Libraries & SVD (1)
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ZIP | 05 Jan 2015 |
05 Jan 2015
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Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STH240N10F7-6 |
Active
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H2PAK-6 | Industrial | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STH240N10F7-6 | 2 distributors | Free Sample Buy Direct |
Active
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EAR99 | NEC | Tape And Reel | H2PAK-6 | - | - | CHINA | 1.72 / 1k |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors