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STI22NM60N
Obsolete
Design Win
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in I2PAK

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Product overview

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on‑resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance
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STMicroelectronics - STI22NM60N

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SPICE models (1)

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STI22NM60N PSpice model
1.0 01 Aug 2015
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01 Aug 2015
STI22NM60N PSpice model 1.0

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