STL13NM60N

Active
Design Win

N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STL13NM60N

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL13NM60N
Active
PowerFLAT 8x8 HV Industrial Ecopack2

STL13NM60N

Package:

PowerFLAT 8x8 HV

Material Declaration**:

Marketing Status

Active

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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STL13NM60N Available at distributors

Distributor availability of STL13NM60N

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Active
EAR99 NEC Tape and Reel PowerFLAT 8x8 HV - - CHINA

STL13NM60N Active

Package:
PowerFLAT 8x8 HV
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STL13NM60N

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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Distributor reported inventory date:

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors