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This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STL42P6LLF6 | Active | PowerFLAT 5x6 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|
| STL42P6LLF6 | 5 distributors | PowerFLAT 5x6 | Tape And Reel | Active | EAR99 | CHINA | 1.15 / 1k |
STL42P6LLF6
Package
PowerFLAT 5x6Packing Type
Tape And ReelBudgetary Price (US$)*/Qty
1.15 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
