This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on) * area
- Industry’s best FoM (figure of merit)
- Ultra low-gate charge
- 100 % avalanche tested
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 5x6 VHV||Industrial||Ecopack2|| |
Package:PowerFLAT 5x6 VHV
PowerFLAT 5x6 VHV
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.