This device is a N-channel STripFET™ II Power MOSFET that is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dv/dt capability
- Avalanche rugged technology
- 100% avalanche tested
- Low threshold drive
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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RoHS Compliance Grade
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