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STO67N60M6

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N-channel 600 V, 48 mOhm typ., 34 A MDmesh M6 Power MOSFET in a TO-LL package

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Product overview

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

  • All features

    • Reduced switching losses
    • Lower RDS(on) per area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    • High creepage package
    • Excellent switching performance thanks to the extra driving source pin
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STMicroelectronics - STO67N60M6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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SPICE models (1)

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Version
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STO67N60M6 Pspice Model
1.0 25 May 2020
25 May 2020
STO67N60M6 Pspice Model 1.0

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STO67N60M6
Active
TO-LL Industrial Ecopack2

STO67N60M6

Package:

TO-LL

Material Declaration**:

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Marketing Status

Active

Package

TO-LL

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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