STP18NM60N

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Design Win

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220

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Product overview

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STP18NM60N

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STP18NM60N
Active
TO-220 Industrial Ecopack2

STP18NM60N

Package:

TO-220

Material Declaration**:

Marketing Status

Active

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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